Real-time monitoring of initial thermal oxidation on Si(001) surfaces by synchrotron radiation photoemission spectroscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 6 B, 2003, Pages 3976-3982

  Yoshigoe, Akitaka ^a   Moritani, Kousuke ^a,b   Teraoka, Yuden ^a  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

O2 gas; Oxidation state; Reaction kinetics; Si(001) surface; Synchrotron radiation; Thermal oxidation; Time resolved photoemission measurement

Indexed keywords

LANGMUIR BLODGETT FILMS; OXIDATION; PHOTOEMISSION; REACTION KINETICS; REAL TIME SYSTEMS;

THERMAL OXIDATION;

SEMICONDUCTING SILICON;

EID: 0042364957     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.3976     Document Type: Conference Paper

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