Real-time monitoring of the growth and decomposition of SiO2 layers on Si(001) by a combined method of RHEED and AES

Journal of Electron Spectroscopy and Related Phenomena

Volumn 114-116, Issue , 2001, Pages 401-407

  Takakuwa, Yuji ^a   Ishida, Fumiaki ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; AUGER ELECTRON SPECTROSCOPY; CORRELATION METHODS; DECOMPOSITION; INTERFACES (MATERIALS); MONITORING; MORPHOLOGY; OXIDATION; REAL TIME SYSTEMS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SILICA; SURFACE ROUGHNESS;

LANGMUIR-TYPE ADSORPTION; SURFACE REACTION MODELS;

SEMICONDUCTING SILICON;

EID: 0035277743     PISSN: 03682048     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0368-2048(00)00234-6     Document Type: Article

References (14)

1. Katz L.E. Sze S.M. 2nd Edition VLSI Technology. 1988;McGraw-Hill, New York. Chapter 3.
2. Takahashi Y., Nagase M., Nakamatsu H., Kurihara K., Iwadate K., Nakajima Y., Horiguchi S., Murase K., Tabe M. Electron. Lett. 31:1995;136.
3. Gullis A.G., Canham L.T., Calcott P.D.J. J. Appl. Phys. 82:1997;909.
4. Deal B.E., Grove A.S. J. Appl. Phys. 36:1965;3770.
5. Liu H.I., Biegelsen D.K., Johnson N.M., Ponce F.A., Pease R.F.W. J. Vac. Sci. Technol. B11:1993;2532.
6. Borman V.D., Gusev E.P., Lebedinski Yu.Yu., Troyan V.I. Phys. Rev. B49:1994;5415.
7. Suemitsu M., Enta Y., Miyanishi Y., Miyamoto N. Phys. Rev. Lett. 82:1999;2334.
8. Feltz A., Memmert U., Behm R.J. Surf. Sci. 314:1994;34.
9. Sieple J.V., Pelz J.P. J. Vac. Sci. Technol. A13:1995;772.
10. Kim K.-S., Takakuwa Y., Mori Y., Kono S. Jpn. J. Appl. Phys. 35:1996;L1695.
11. Enta Y., Takegawa Y., Suemitsu M., Miyamoto N. Appl. Surf. Sci. 100-101:1996;449.
12. Horie T., Takakuwa Y., Miyamoto N. Jpn. J. Appl. Phys. 33:1994;4684.
13. Watanabe H., Fujita K., Ichikawa M. Appl. Phys. Lett. 70:1997;1095.
14. Viscido L., Heras J.M. J. Vac. Sci. Technol. A11:1993;175.