Investigation on molybdenum and its conductive oxides as p-type metal gate candidates

ECS Transactions

Volumn 11, Issue 4, 2007, Pages 575-583

  Li, Zilan ^a,b   Schram, Tom ^a   Witters, Thomas ^a   Cho, Hag Ju ^c   O'Sullivan, Barry ^a   Hooker, Jacob ^d   De Gendt, Stefan ^a,b   De Meyer, Kristin ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c Samsung Assignee to IMEC

^d Research   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

LOGIC GATES; MOLYBDENUM OXIDE; OXYGEN; PHASE SEPARATION; SILICON COMPOUNDS; SILICON OXIDES;

ACTIVATION PROCESS; AFTER HIGH TEMPERATURE; CONDUCTIVE OXIDES; HIGH TEMPERATURE; INTEGRATION PROCESS; METAL GATE; OXYGEN INCORPORATION; SILICON OXIDE LAYERS;

DIELECTRIC MATERIALS;

EID: 45249108298     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2779592     Document Type: Conference Paper

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