Nano-scale metallization of Au on flexible polyimide substrate by reversal imprint and lift-off process

Microelectronic Engineering

Volumn 85, Issue 7, 2008, Pages 1561-1567

  Chen, Henry J H ^a   Chen, Li Chun ^b   Lien, Chenhsin ^b   Chen, Shou Ren ^c   Ho, Yu Lun ^c  

^a NATIONAL CHI NAN UNIVERSITY   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Lift off; Nano scale Au; Polyimide; Reversal imprint

Indexed keywords

ANGLE MEASUREMENT; CONTACT ANGLE; ELECTRON BEAM LITHOGRAPHY; METALLIZING; MOLDS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOTECHNOLOGY; NANOWIRES; PHOTORESISTS; POLYMERS; SILICON; SUBSTRATES; WIRE;

(E ,3E) PROCESS; ANTI ADHESION; CONTACT-ANGLE MEASUREMENTS; ELSEVIER (CO); FLEXIBLE POLYIMIDE; LIFT-OFF PROCESSES; METALLIZATION; NANO SCALING; NANOMETER SIZES; NANOWIRES (NW); REVERSAL IMPRINTING; SEM ANALYSIS; SURFACE FREE-ENERGY (SFE);

GOLD ALLOYS;

CONTACT ANGLE; GOLD COMPOUNDS; LITHOGRAPHY; METALIZATION; POLYIMIDES; POLYMETHYL METHACRYLATE; SCANNING ELECTRON MICROSCOPY; SILICON; SURFACE ENERGY; WIRE;

EID: 45249089420     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.02.015     Document Type: Article

References (36)

1. Sheraw C.D., Zhou L., Huang J.R., Gundlach D.J., and Jackson T.N. Appl. Phys. Lett. 80 (2002) 1088
2. Mitzi D.B., Chondroudis K., and Kagan C.R. IBM J. Res. Dev. 45 (2001) 29
3. Klauk H., Halik M., Zschieschang U., Eder F., Schmid G., and Dehm C. Appl. Phys. Lett. 82 (2003) 4175
4. Fujita K., Yasuda T., and Tsutsui T. Appl. Phys. Lett. 82 (2003) 4373
5. Lee M.J., Judge C.P., and Wright S.W. Solid-State Electron. 44 (2000) 1431
6. Park S.K., Kim Y.H., Han J.I., Moon D.G., Kim W.K., and Kwak M.G. Synth. Met. 139 (2003) 377
7. Lee J.H., Kim S.H., Kim G.H., Lim S.C., Lee H., Jang J., and Zyung T. Synth. Met. 139 (2003) 445
8. Meth J.S., Zane S.G., Sharp K.G., and Agrawal S. Thin Solid Films 444 (2003) 227
9. Park S.K., Kim Y.H., Han J.I., Moon D.G., and Kim W.K. Thin Solid Films 429 (2003) 231
10. Dimitrakopoulos C.D., and Mascaro D.J. IBM J. Res. Dev. 45 (2001) 11
11. Fix W., Ullmann A., Ficker J., and Clemens W. Appl. Phys. Lett. 81 (2002) 1735
12. Drury C.J., Mutsaers C.M.J., Hart C.M., Matters M., and Leeuw D.M. Appl. Phys. Lett. 73 (1998) 108
13. Crone B., Dodabalapur A., Lin Y.Y., Filas R.W., Bao Z., LaDuca A., Sarpeshkar R., Katz H.E., and Li W. Nature 403 (2000) 521
14. Crone B.K., Dodabalapur A., Sarpeshkar R., Gelperin A., Katz H.E., and Bao Z. J. Appl. Phys. 91 (2002) 10140
15. Erlenkotter A., Kottbus M., and Chemnitius G.C. J. Electroanal. Chem. 481 (2000) 82
16. Futai N., Futai N., Matsumoto K., and Shimoyama I. Sensor Actuator A 111 (2004) 293
17. Shen K., Chen X., Guo M., and Cheng J. Sensor Actuator B 105 (2005) 251
18. Huang C.U., Chen I.Y., Chen H.J.H., Jou C.F., and Huang S.R.S. Jpn. J. of Appl. Phys. 44 (2005) 8356
19. Cho S.H., Kim S.H., Lee J.G., and Lee N.E. Microelectron. Eng. 77 (2005) 116
20. Zhang Y., Petta J.R., Ambily S., Shen Y., Ralph D.C., and Malliaras G.G. Adv. Mater. 19 (2003) 1632
21. Wang J.Z., Zheng Z.H., and Sirringhaus H. Appl. Phys. Lett. 89 (2006) 083513
22. Semiconductor Industry Association (SIA), International Technology Roadmap for Semiconductor. 2003 Edition. Available at .
23. Chen H.J.H., Liu J.F., Hsu Y.J., Syu J.C.C., and Huang F.S. Nanotechnology 16 (2005) 2913
24. Chou S.Y., Krauss P.R., Zhang W., Jay Guo L., and Zhuang L. J. Vac. Sci. Technol. B15 (1997) 2897
25. Chou S.Y., Krauss P.R., and Renstrom P.J. Appl. Phys. Lett. 67 (1995) 3114
26. Torres C.M.S., Zankovych S., Seekamap J., Kam A.P., Cedeno C.C., Hoffmanm T., Ahopelto J., Reuther F., Pfeiffer K., Bleidiessel G., Gruetzner G., Maximov M.V., and Heidari B. Mater. Sci. Eng. C 23 (2003) 23
27. Chao C.Y., and Jay Guo L. J. Vac. Sci. Technol. B20 (1997) 2862
28. Chen Y., Macintyre D., Boyd E., Moran D., Thayn I., and Thoms S. J. Vac. Sci. Technol. B20 (2002) 2887
29. Matsui S., Igaku Y., and Ishigaki H. J. Vac. Sci. Technol. B19 (2001) 2801
30. Jay Guo L. J. Phys. D: Appl. Phys. 37 (2004) R123
31. Huang X.D., Bao L.R., Cheng X., Guo L.J., Pang S.W., and Yee A.F. J. Vac. Sci. Technol. B20 (2002) 2872
32. Bao L.R., Cheng X., Huang X.D., Guo L.J., Pang S.W., and Yee A.F. J. Vac. Sci. Technol. B20 (2002) 2881
33. Beck M., Graczyk M., Maximov I., Sarwe E.L., Ling T.G.I., Keil M., and Montelius L. Microelectron. Eng. 61-62 (2005) 441
34. Chen J.K., Ko F.H., Hsieh K.F., Chou C.T., and Chang F.C. J. Vac. Sci. Technol. B 22 (2004) 3233
35. Nishino T., Meguro M., Nakamae K., Matsushita M., and ueda Y. Langmuir 15 (1999) 4321
36. Bauer J., and Drescher G. J. Vac. Sci. Technol. B 14 (1996) 2485