30 nm Channel Length Pentacene Transistors

Advanced Materials

Volumn 15, Issue 19, 2003, Pages 1632-1635

  Zhang, Yuanjia ^a   Petta, Jason R ^b   Ambily, Samtha ^a   Shen, Yulong ^a   Ralph, Daniel C ^b   Malliaras, George G ^a  

^a Department of Materials Science and Engineering   (United States)

^b Sibley School of Mechanical and Aerospace Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANISOTROPY; DEPOSITION; ELECTRON BEAM LITHOGRAPHY; ETCHING; FIELD EFFECT TRANSISTORS; GOLD;

CHANNEL LENGTH;

THIN FILM TRANSISTORS;

EID: 0142231467     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/adma.200305158     Document Type: Article

References (16)

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