Physical properties of strained Ba0.5 Sr0.5 (Ti,Mn) O3 thin films buffered with La0.68 Ba0.32 MnO3 conductive layers

Electrochemical and Solid-State Letters

Volumn 11, Issue 8, 2008, Pages

  Liang, Yuan Chang ^a,d   Liang, Yung Ching ^b   Chu, J P ^c  

^a CHIENKUO TECHNOLOGY UNIVERSITY   (Taiwan)

^b UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

^c NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^d ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYERS; CERAMIC CAPACITORS; DIELECTRIC WAVEGUIDES; EPITAXIAL GROWTH; EPITAXIAL LAYERS; FILM GROWTH; LEAKAGE CURRENTS; MANGANESE; MANGANESE COMPOUNDS; OPTICAL WAVEGUIDES; OZONE WATER TREATMENT; PERMITTIVITY; PHYSICAL PROPERTIES; SILICON; SURFACE STRUCTURE; THICK FILMS; THIN FILMS; TITANIUM OXIDES;

(1 1 0) SURFACE; (PL) PROPERTIES; AMERICAN INSTITUTE OF PHYSICS (AIP); APPLIED BIAS VOLTAGE; BA0.5SR0.5TIO3 (BST); BST FILMS; C -AXIS; CONDUCTIVE LAYERS; DIELECTRIC CONSTANTS; FERROELECTRIC PROPERTIES; LATTICE (CO); LATTICE DISTORTIONS; NON-LINEAR RELATIONSHIPS; SI(2 1 1) SUBSTRATES;

FERROELECTRIC FILMS;

EID: 45249084754     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2931013     Document Type: Article

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