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Volumn 254, Issue 19, 2008, Pages 6208-6210
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Low-temperature formation of silicon nitride films using pulsed-plasma CVD under near atmospheric pressure
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Author keywords
Atmospheric pressure; PECVD; Polyethylene terephthalate; Silicon nitride
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Indexed keywords
ATMOSPHERIC CHEMISTRY;
ATMOSPHERIC PRESSURE;
DEPOSITION RATES;
ELECTRIC DISCHARGES;
INERT GASES;
NITRIDES;
PLASMA CVD;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
PLASTIC BOTTLES;
POLYETHYLENE TEREPHTHALATES;
SCANNING ELECTRON MICROSCOPY;
SILICON NITRIDE;
SUBSTRATES;
TEMPERATURE;
ATMOSPHERIC PRESSURE PLASMAS;
DEPOSITED FILMS;
FILM FABRICATION;
HIGH DEPOSITION RATES;
LOW TEMPERATURE FORMATION;
LOW TEMPERATURES;
POLYETHYLENE TEREPHTHALATES (PET);
SILICON NITRIDE FILM;
X RAY PHOTOELECTRON SPECTROSCOPY;
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EID: 45049084981
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/j.apsusc.2008.02.186 Document Type: Article |
Times cited : (7)
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References (12)
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