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Volumn 254, Issue 19, 2008, Pages 6208-6210

Low-temperature formation of silicon nitride films using pulsed-plasma CVD under near atmospheric pressure

Author keywords

Atmospheric pressure; PECVD; Polyethylene terephthalate; Silicon nitride

Indexed keywords

ATMOSPHERIC CHEMISTRY; ATMOSPHERIC PRESSURE; DEPOSITION RATES; ELECTRIC DISCHARGES; INERT GASES; NITRIDES; PLASMA CVD; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASTIC BOTTLES; POLYETHYLENE TEREPHTHALATES; SCANNING ELECTRON MICROSCOPY; SILICON NITRIDE; SUBSTRATES; TEMPERATURE;

EID: 45049084981     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.02.186     Document Type: Article
Times cited : (7)

References (12)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.