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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 20-23, 2005, Pages

Incubation-free growth of polycrystalline Si films by plasma-enhanced chemical vapor deposition using pulsed discharge under near atmospheric pressure

(6) Kitabatake, Hirotatsu a Suemitsu, Maki a Kitahata, Hiroya b Nakajima, Setsuo b Uehara, Tsuyoshi b Toyoshima, Yasutake a,c

a TOHOKU UNIVERSITY (Japan)

b SEKISUI CHEMICAL CO LTD (Japan)

c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

Author keywords

Atmospheric pressure; Cross sectional transmission electron microscopy (X TEM); Incubation layer; Plasma enhanced chemical vapor deposition (PE CVD); Polycrystalline Si; Pulsed discharge; Raman scattering; X ray diffraction (XRD)

Indexed keywords

ATMOSPHERIC PRESSURE; GROWTH (MATERIALS); PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; PRESSURE EFFECTS; RAMAN SCATTERING; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY (X-TEM); INCUBATION LAYERS; POLYCRYSTALLINE SI; PULSED DISCHARGE;

SILICON;

EID: 24044449674 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.44.L683 Document Type: Article

Times cited : (13)

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