SiNx barrier layers deposited at 250°C on a clear polymer substrate

Materials Research Society Symposium Proceedings

Volumn 936, Issue , 2006, Pages 7-12

  Cherenack, Kunigunde ^a   Kattamis, Alex ^a   Long, Ke ^a   Cheng, I Chun ^a   Wagner, Sigurd ^a   Sturm, James C ^a  

^a Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; GATES (TRANSISTOR); LIQUID CRYSTAL DISPLAYS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; THIN FILM TRANSISTORS;

BARRIER LAYERS; POLYMER FOILS; POLYMER SUBSTRATES; VOLTAGE SHIFTS;

SILICON NITRIDE;

EID: 33947659598     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-0936-l01-05     Document Type: Conference Paper

References (2)

1. Ke Long, A. Z. Kattamis, I.-C. Cheng, H. Gleskova, S. Wagner, and J. C. Sturm, IEEE Electron Device Letters, 27 (2), 111-113 (2006).
2. I-Chun Cheng, Alex Kattamis, Ke Long, James C. Sturm, Sigurd Wagner, Journal of the SID 13 (7), 563-568 (2005).