Low-temperature PECVD of transparent SiOxCyH z thin films

Chemical Vapor Deposition

Volumn 13, Issue 5, 2007, Pages 205-210

  Barreca, Davide ^a   Gasparotto, Alberto ^a   Maccato, Chiara ^a   Maragno, Cinzia ^a   Tondello, Eugenia ^a   Rossetto, Gilberto ^b  

^a UNIVERSITY OF PADOVA   (Italy)

^b CNR   (Italy)

Author keywords

LRI; PECVD; SiOxCyHz; Surface techniques; Thin films

Indexed keywords

COATINGS; COPPER; COTTON FIBERS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; FOURIER TRANSFORMS; INFRARED SPECTROSCOPY; MICROSCOPIC EXAMINATION; NETWORK PROTOCOLS; OPTICAL PROPERTIES; PHOTOELECTRON SPECTROSCOPY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; PROTECTIVE COATINGS; RATE CONSTANTS; SEMICONDUCTING SILICON COMPOUNDS; SENSOR NETWORKS; SILICA; SILICON; SILICON COMPOUNDS; SPECTRUM ANALYSIS; SUBSTRATES; THICK FILMS; THIN FILMS; ULTRAVIOLET SPECTROSCOPY;

AMORPHOUS LAYERS; AR PLASMAS; CHEMICAL STRUCTURES; CONFORMAL COVERAGES; COVALENTLY BONDED; DEPOSITION PROCESSES; ENERGY DISPERSIVE; FILM MORPHOLOGIES; FOURIER TRANSFORM INFRARED; GLANCING INCIDENCES; IN SITU MONITORING; LASER REFLECTION INTERFEROMETRIES; LRI; METHOXY GROUPS; MILD SYNTHESIS; NANOINDENTATION MEASUREMENTS; OPTICAL TRANSPARENCIES; ORGANIC/INORGANIC; OXIDIZING REAGENTS; PECVD; PRECURSOR COMPOUNDS; SI(100); SIOXCYHZ; SUBSTRATE OXIDATIONS; SURFACE TECHNIQUES; SYNTHESIS CONDITIONS; TETRAMETHOXYSILANE; THICKNESS VALUES; VIS SPECTROSCOPIES; X-RAY DIFFRACTIONS; X-RAY PHOTOELECTRON SPECTROSCOPIES;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 44949139570     PISSN: 09481907     EISSN: 15213862     Source Type: Journal    
DOI: 10.1002/cvde.200606518     Document Type: Article

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