Deposition behavior of hexamethydisiloxane films based on the FTIR analysis of Si-O-Si and Si-CH3 bonds

Thin Solid Films

Volumn 311, Issue 1-2, 1997, Pages 157-163

  Kim, Min Tae ^a  

^a Korea Electric Power Research Institute (KEPRI)   (South Korea)

Author keywords

Deposition process; FTIR; Hexamethyldisiloxane films; Plasma polymerization

Indexed keywords

DEPOSITION; DISSOCIATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGEN BONDS; LIGHT ABSORPTION; OPTICAL VARIABLES MEASUREMENT; PLASMA APPLICATIONS; POLYMERIZATION; SILICONES;

ELECTRON IMPACT; HEXAMETHYLDISILOXANE FILMS; INFRARED ABSORPTION INTENSITY; PLASMA POLYMERIZATION; RADIO FREQUENCY REACTOR;

AMORPHOUS FILMS;

EID: 0031344807     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)00683-4     Document Type: Article

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