Fabrication and characteristics of SiOx films by plasma chemical vapor deposition of tetramethylorthosilicate

Surface and Coatings Technology

Volumn 123, Issue 2-3, 2000, Pages 204-209

  Yang, Mu Rong ^a   Chen, Ko Shao ^a   Hsu, Shao Ta ^a   Wu, Tzong Zeng ^b  

^a TATUNG UNIVERSITY   (Taiwan)

^b NATIONAL DONG HWA UNIVERSITY   (Taiwan)

Author keywords

Plasma enhanced chemical vapor deposition; Silicon oxide; TMOS

Indexed keywords

FOURIER TRANSFORM INFRARED SPECTROSCOPY; HARDNESS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYMETHYL METHACRYLATES; SILICON COMPOUNDS;

SILICON OXIDE; TETRAMETHYLORTHOSILICATE;

PROTECTIVE COATINGS;

EID: 0033904832     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(99)00521-6     Document Type: Article

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