GaN heteroepitaxy by remote plasma MOCVD: Real time monitoring by laser reflectance interferometry

Journal De Physique. IV : JP

Volumn 11, Issue 3, 2001, Pages

  Losurdo, M ^a   Grimaldi, A ^a   Giangregorio, M ^a   Capezzuto, P ^a   Bruno, G ^a  

^a CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; INTERFEROMETRY; LIGHT ABSORPTION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; REACTION KINETICS; SURFACE ROUGHNESS;

LASER REFLECTANCE INTERFEROMETRY (LRI);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0034855044     PISSN: 11554339     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1051/jp4:20013148     Document Type: Conference Paper

References (13)