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Volumn 15, Issue 28-30, 2001, Pages 3749-3752
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Formation of silicon nanocrystals and interface islands in synchrotron-radiation-irradiated SiO2 films on Si(100)
a
a
NTT CORPORATION
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
OXIDE;
SILICON;
SILICON DIOXIDE;
CONFERENCE PAPER;
CRYSTALLIZATION;
DESORPTION;
ELECTRON DIFFRACTION;
ELLIPSOMETRY;
FILM;
HIGH TEMPERATURE;
IRRADIATION;
MEASUREMENT;
RADIATION;
SOLID STATE;
SYNCHROTRON;
TRANSMISSION ELECTRON MICROSCOPY;
ULTRAVIOLET RADIATION;
X RAY;
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EID: 0035842045
PISSN: 02179792
EISSN: None
Source Type: Journal
DOI: 10.1142/s0217979201008573 Document Type: Conference Paper |
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Times cited : (2)
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References (13)
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