Innovating SOI films: Impact of thickness and temperature

Microelectronic Engineering

Volumn 72, Issue 1-4, 2004, Pages 357-361

  Bresson, N ^a,b   Cristoloveanu, S ^a  

^a IMEP LAHC   (France)

^b PARC TECHNOLOGIQUE DES FONTAINES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; COMPUTER SIMULATION; MOSFET DEVICES; OXIDES; PARAMETER ESTIMATION; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; THERMAL EFFECTS;

CONDUCTING CHANNELS; FLAT-BAND VOLTAGE;

THIN FILMS;

EID: 1642618658     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2004.01.016     Document Type: Conference Paper

References (7)

1. Wong H.S., Frank D.J., Solomon P.M. IEDM Techn. Dig. 1998;407-410.
2. Cristoloveanu S., Munteanu D., Liu M.S.T. IEEE Trans. Electron Dev. 47(5):2000;1018-1027.
3. Allibert F., Vinet M., Lolivier J., Deleonibus S., Cristoloveanu S. Proc. IEEE Int. SOI Conf. 2002;187-188.
4. Lim H.K., Fossum J.G. IEEE Trans. Electron Dev. ED-30(10):1983.
5. Groeseneken G., Colinge J.P., Maes H., Alderman J.C., Holt S. IEEE Electron Device Lett. 11:1990;329-331.
6. Flandre D., et al. IEEE Electron Device Lett. 14:1993;10-12.
7. Jeon D.S., Burk D.E. IEEE Trans. Electron Dev. 38(9):1991.