Fundamental Role of Creation and Activation in Radiation-Induced Defect Production in High-Purity Amorphous SiO2

Physical Review Letters

Volumn 76, Issue 16, 1996, Pages 2926-2929

  Mashkov, V A ^a   Austin, Wm R ^a   Zhang, Lin ^a   Leisure, R G ^a  

^a Immunology and Pathology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001715130     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.76.2926     Document Type: Article

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