InGaN/GaN MQW high brightness LED grown by MOCVD

Optical Materials

Volumn 23, Issue 1-2, 2003, Pages 183-186

  Zhang, G Y ^a   Yang, Z J ^a   Tong, Y Z ^a   Qin, Z X ^a   Hu, X D ^a   Chen, Z Z ^a   Ding, X M ^a   Lu, M ^a   Li, Z H ^a   Yu, T J ^a   Zhang, L ^a   Gan, Z Z ^a   Zhao, Y ^b   Yang, C F ^b  

^a PEKING UNIVERSITY   (China)

^b NONE

Author keywords

GaN; Light emitting diodes (LEDs); Multi quantum dots (MQDs); Multi quantum wells (MQWs)

Indexed keywords

LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

GROWTH TEMPERATURES;

GALLIUM NITRIDE;

EID: 0038348672     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-3467(03)00081-8     Document Type: Conference Paper

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