Comparative study of GaN based light emitting devices grown on sapphire and GaN substrates

Materials Research Society Symposium Proceedings

Volumn 831, Issue , 2005, Pages 715-720

  Figge, Stephan ^a   Dennemarck, Jens ^a   Alexe, Gabriela ^a   Hommel, Detlef ^a  

^a UNIVERSITY OF BREMEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COALESCENCE; LIGHT EMITTING DIODES; OPTIMIZATION; OPTOELECTRONIC DEVICES; SUBSTRATES; THERMAL CONDUCTIVITY; VAPOR PHASE EPITAXY;

HIGH POWER DEVICES; LASER PROJECTION; SAPPHIRE SUBSTRATES; WAFER PRODUCTION;

GALLIUM NITRIDE;

EID: 23844493393     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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