Response of silicon carbide to high-intensity laser irradiation in a high-pressure inert gas atmosphere

Journal of Materials Research

Volumn 12, Issue 1, 1997, Pages 147-160

  Sadler, L Y ^a   Shamsuzzoha, M ^b  

^a University of Alabama   (United States)

^b University of Alabama   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CARBON; CARBON DIOXIDE LASERS; CRYSTAL MICROSTRUCTURE; GRAIN SIZE AND SHAPE; LASER BEAMS; MORPHOLOGY; SILICON; SINTERING; THERMAL EFFECTS; VAPOR PRESSURE; VAPORIZATION;

AMORPHOUS CARBON; LASER RADIATION;

SILICON CARBIDE;

EID: 0030813253     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.1997.0022     Document Type: Article

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