Athermal crystallization induced by electronic excitations in ion-irradiated silicon carbide

Applied Physics Letters

Volumn 89, Issue 24, 2006, Pages

  Benyagoub, A ^a   Audren, A ^a   Thome L ^b   Garrido, F ^b  

^a UNIVERSITÉ DE CAEN   (France)

^b CENTRE DE CALCUL DE L INSTITUT NATIONAL DE PHYSIQUE NUCLEAIRE ET DE PHYSIQUE DES PARTICULES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; ELECTRIC EXCITATION; ELECTRON IRRADIATION; ENERGY DISSIPATION; HEAVY IONS; ION BEAMS; NUCLEAR ENERGY; SILICON CARBIDE;

ELASTIC COLLISIONS; ELECTRONIC EXCITATIONS; ROOM TEMPERATURE;

SINGLE CRYSTALS;

EID: 33845752522     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2405410     Document Type: Article

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