Atomistic modeling of amorphous silicon carbide using a bond-order potential

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 255, Issue 1 SPEC. ISS., 2007, Pages 130-135

  Devanathan, R ^a   Gao, F ^a   Weber, W J ^a  

^a PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

Author keywords

Amorphous; Chemical disorder; Molecular dynamics; Short range order; SiC

Indexed keywords

AMORPHOUS SILICON; CHEMICAL BONDS; NEUTRON IRRADIATION; ORDER DISORDER TRANSITIONS; QUENCHING; SILICON CARBIDE;

AMORPHOUS STATES; CHEMICAL DISORDER; HOMONUCLEAR BOND RATIO; SHORT RANGE ORDER;

MOLECULAR DYNAMICS;

EID: 33846934416     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.11.045     Document Type: Article

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