Characterization of titanium oxynitride films deposited by low pressure chemical vapor deposition using amide Ti precursor

Thin Solid Films

Volumn 516, Issue 18, 2008, Pages 6330-6335

  Song, Xuemei ^a   Gopireddy, Deepthi ^a   Takoudis, Christos G ^a,b  

^a 1120 Science and Engineering Offices   (United States)

^b University of Illinois at Chicago   (United States)

Author keywords

Chemical vapor deposition; TDEAT; Titanium oxide; Titanium oxynitride

Indexed keywords

FOURIER TRANSFORM INFRARED SPECTROSCOPY; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; NITROGEN COMPOUNDS; RAMAN SCATTERING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; TITANIUM OXIDES;

FILM DEPOSITION; TDEAT; TITANIUM OXYNITRIDE;

THIN FILMS;

EID: 44649116711     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.12.148     Document Type: Article

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