Mechanisms for the enhancement of the thermal stability of organic thin films by aluminum oxide capping layers

Journal of Materials Research

Volumn 21, Issue 2, 2006, Pages 455-464

  Sellner, S ^a,b   Gerlach, A ^c,d   Schreiber, Frank ^c,d   Kelsch, M ^a   Kasper, N ^a,e   Dosch, H ^a,b   Meyer, S ^b   Pflaum, J ^b   Fischer, M ^b   Gompf, B ^b   Ulbricht, G ^a  

^a MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

^b UNIVERSITY OF STUTTGART   (Germany)

^c UNIVERSITY OF OXFORD   (United Kingdom)

^d UNIVERSITY OF TÜBINGEN   (Germany)

^e KARLSRUHE INSTITUTE OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; CRYSTAL STRUCTURE; MORPHOLOGY; SEMICONDUCTING ORGANIC COMPOUNDS; STOICHIOMETRY; THERMAL EFFECTS; THERMODYNAMIC STABILITY; X RAY DIFFRACTION ANALYSIS;

ALUMINUM OXIDE CAPPING LAYERS; DIINDENOPERYLENE; ORGANIC THIN FILMS; SPUTTERED ALUMINUM OXIDE LAYERS;

THIN FILMS;

EID: 33644553787     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2006.0052     Document Type: Article

References (40)

1. Physics of Organic Semiconductors, edited by W. Brütting (Wiley-VCH, Weinheim, Germany, 2005).
2. G. Horowitz: Organic thin film transistors: From theory to real devices. J. Mater. Res. 19, 1946 (2004).
3. S.R. Forrest: The path to ubiquitous and low-cost organic electronic appliances on plastic. Nature 428, 911 (2004).
4. C.D. Dimitrakopoulos and P.R.L. Malenfant: Organic thin film transistors for large area electronics. Adv. Mater. 14, 99 (2002).
5. A. Dodabalapur, J. Laquindanum, H.E. Katz, and Z. Bao: Complementary circuits with organic transistors. Appl. Phys. Lett. 69, 4227 (1996).
6. S. Scheinert and W. Schliefke: Analyzes of field-effect devices based on poly(3-octylthiophene). Synth. Met. 139, 501 (2003).
7. 2O on electrical characteristics of pentacene thin film transistors. Thin Solid Films 464-465, 437 (2004).
8. Ch. Pannemann, T. Diekmann, and U. Hilleringmann: Degradation of organic field-effect transistors made of pentacene. J. Mater. Res. 19, 1999 (2004).
9. J.R. Sheats, H. Antoniadis, M. Hueschen, W. Leonard, J. Miller, R. Moon, D. Roitman, and A. Stocking: Organic electroluminescent devices. Science 273, 884 (1996).
10. X. Zhou, J. He, L.S. Liao, M. Lu, X.M. Ding, X.Y. Hou, X.M. Zhang, X.Q. He, and S.T. Lee: Real-time observation of temperature rise and thermal breakdown processes in organic LEDs using an IR imaging and analysis system. Adv. Mater. 12, 265 (2000).
11. N.M. Paulo dos Anjos, H. Aziz, N-X. Hu, and Z.D. Popovic: Temperature dependence of electroluminescence degradation in organic light-emitting devices without and with a copper phthalocyanine buffer layer. Org. Electron. 3, 9 (2002).
12. F. Schreiber, M.C. Gerstenberg, H. Dosch, and G. Scoles: Melting point enhancement of a self-assembled monolayer induced by a van der Waals bound capping layer. Langmuir 19, 10004 (2003).
13. P. Fenter, F. Schreiber, V. Bulović, and S.R. Forrest: Thermally induced failure mechanisms of organic light emitting device structures probed by x-ray specular reflectivity. Chem. Phys. Lett. 277, 521 (1997).
14. B. Krause, A.C. Dürr, F. Schreiber, H. Dosch, and O.H. Seeck: Thermal stability and partial dewetting of crystalline organic thin films: 3,4,9,10-perylenetetracarboxylic dianhydride on Ag(111). J. Chem. Phys. 119, 3429 (2003).
15. K.M. Kim, B.J. Jang, W.S. Cho, and S.H. Ju: The property of encapsulation using thin film multi layer for application to organic light emitting device. Curr. Appl. Phys. 5, 64 (2005).
16. G.H. Kim, J. Oh, Y.S. Yang, L-M. Do, and K.S. Suh: Lamination process encapsulation for longevity of plastic-based organic light-emitting devices. Thin Solid Films 467, 1 (2004).
17. J.H. Lee, G.H. Kim, S.H. Kim, S.C. Lim, Y.S. Yang, J. Oh, J.H. Youk, J. Jang, and T. Zyung: The novel encapsulation method for organic thin-film transistors. Curr. Appl. Phys. 5, 348 (2005).
18. R.G. Munro: Evaluated material properties for a sintered α-alumina. J. Am. Ceram. Soc. 80, 1919 (1997).
19. W.H. Gitzen: Alumina as a Ceramic Material (The American Ceramic Society, Westerville, OH, 1997).
20. N. Karl: Charge-carrier mobility in organic molecular crystals, in Organic Electronic Materials, Springer Series in Materials Science, Vol. 41, edited by R. Farchioni and G. Grosso (Springer, Berlin, Germany, 2001), Chap. 3.
21. A.C. Dürr, F. Schreiber, M. Münch, N. Karl, B. Krause, V. Kruppa, and H. Dosch: High structural order in thin films of the organic semiconductor diindenoperylene. Appl. Phys. Lett. 81, 2276 (2002).
22. S. Sellner, A. Gerlach, F. Schreiber, M. Kelsch, N. Kasper, H. Dosch, S. Meyer, J. Pflaum, M. Fischer, and B. Gompf: Strongly enhanced thermal stability of crystalline organic thin films induced by aluminum oxide capping layers. Adv. Mater. 16, 1750 (2004).
23. 2: Preparation and characterization. J. Vac. Sci. Technol. A 7, 1298 (1989).
24. R. Cueff, G. Baud, J.P. Besse, and M. Jacquet: Study of thin alumina coatings sputtered on polyethylene terephthalate films. Thin Solid Films 266, 198 (1995).
25. K. Koski, J. Hölsä, and P. Juliet. Properties of aluminium oxide thin films deposited by reactive magnetron sputtering. Thin Solid Films 339, 240 (1999).
26. J. Lee, S.S. Kim, and S. Im: Electrical properties of aluminum oxide films deposited on indium-tin-oxide glasses. J. Vac. Sci. Technol. B 21, 953 (2003).
27. 3 layers reactively deposited by means of pulsed magnetron sputtering. Surf. Coat. Technol. 86-87, 640 (1996).
28. F. Schreiber: Organic molecular beam deposition: Growth studies beyond the first monolayer. Phys. Status Solidi 201, 1037 (2004).
29. G. Witte and C. Wöll: Growth of aromatic molecules on solid substrates for applications in organic electronics. J. Mater. Res. 19, 1889 (2004).
30. A.C. Dürr, F. Schreiber, K.A. Ritley, V. Kruppa, J. Krug, H. Dosch, and B. Struth: Rapid roughening in thin film growth of an organic semiconductor (diindenoperylene). Phys. Rev. Lett. 90, 016104 (2003).
31. A.C. Dürr, F. Schreiber, M. Kelsch, and H. Dosch: Optimized preparation of cross sectional TEM specimens of organic thin films. Ultramicroscopy 98, 51 (2003).
32. F.M. D'Heurle and J.M.E. Harper: Note on the origin of intrinsic stresses in thin films deposited via evaporation and sputtering. Thin Solid Films 171, 81 (1989).
33. L. Parfitt, M. Goldiner, J.W. Jones, and G.S. Was: Residual stresses in amorphous alumina films synthesized by ion-beam-assisted deposition. J. Appl. Phys. 77, 3029 (1995).
34. K. Koski, J. Hölsä, P. Juliet, Z.H. Wang, R. Aimo, and K. Pischow: Characterisation of aluminium oxide thin films deposited on polycarbonate substrates by reactive magnetron sputtering. Mater. Sci. Eng. B 65, 94 (1999).
35. H. Paulus and W. Bolse (unpublished).
36. A.C. Dürr, F. Schreiber, M. Kelsch, H.D. Carstanjen, and H. Dosch: Morphology and thermal stability of metal contacts on crystalline organic thin films. Adv. Mater. 14, 961 (2002).
37. M. Scharnberg, J. Hu, J. Kanzow, K. Rätzke, R. Adelung, F. Faupel, C. Pannemann, U. Hilleringmann, S. Meyer, and J. Pflaum: Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronics. Appl. Phys. Lett. 86, 024104 (2005).
38. A.C. Dürr, N. Koch, M. Kelsch, A. Rühm, J. Ghijsen, R.L. Johnson, J-J. Pireaux, J. Schwartz, F. Schreiber, H. Dosch, and A. Kahn: Interplay between morphology, structure and electronic properties at diindenoperylene-gold interfaces. Phys. Rev. B 68, 115428 (2003).
39. S. Meyer, S. Sellner, F. Schreiber, H. Dosch, G. Ulbricht, M. Fischer, B. Gompf, and J. Pflaum (unpublished).
40. J. Niemax and J. Pflaum (unpublished).