Reactive sputtering of Al2O3 on AlGaN/GaN heterostructure field-effect transistor

Thin Solid Films

Volumn 516, Issue 18, 2008, Pages 6483-6486

  Jhin, J ^a   Kang, H ^b   Byun, D ^b   Kim, D ^c   Adesida, I ^c  

^a Korea Photonics Technology Institute (KOPTI)   (South Korea)

^b Korea University   (South Korea)

^c University of Illinois at Urbana Champaign   (United States)

Author keywords

Aluminum oxide; Chemical vapor deposition; Epitaxy; Gallium nitride

Indexed keywords

ALUMINUM COMPOUNDS; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; GALLIUM NITRIDE; HETEROJUNCTIONS; REACTIVE SPUTTERING;

ALUMINUM OXIDE; GATE LEAKAGE; LEAKAGE CURRENT DENSITY;

FIELD EFFECT TRANSISTORS;

EID: 44649100334     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.02.039     Document Type: Article

References (18)

1. Nguyen N.X., Micovic M., Wong W.-S., Hashimoto P., McCray L.-M., Janke P., and Nguyen C. Electron. Lett. 36 (2000) 468
2. Hashizume T., Alekseev E., Pavlidis D., Boutros K.S., and Redwing J. J. Appl. Phys. 88 (2000) 1983
3. Lay T.S., Hong M., Kwo J., Mannaerts J.P., Hung W.H., and Huang D.J. Solid-State Electron. 45 (2001) 1679
4. Pearton S.J., Ren F., Zhang A.P., and Lee K.P. Mater. Sci. Eng., Rep. R 30 (2000) 55
5. Khan M.A., Shur M.S., Chen Q.C., and Kuznia J.N. Electron. Lett. 30 (1994) 2175
6. Khan M.A., Hu X., Tarakji A., Sumin G., Yang J., Gaska R., and Shur M.S. Appl. Phys. Lett. 77 (2000) 1339
7. Harrison I., Clayton W., and Jeffs W. Phys. Status Solidi (a) 188 (2001) 275
8. Luo B., Johnson J.W., Gila B.P., Onstine A., Abernathy C.R., Ren F., Pearton S.J., Baca A.G., Dabiran A.M., Wowchack A.M., and Chow P.P. Solid-State Electron. 46 (2002) 467
9. Khan M.A., Hu X., Sumin G., Lunev A., Yang J., and Shur M.S. IEEE Electron Device Lett. 21 (2000) 63
10. Chang H., Choi Y., Kong K., and Ryu B. Chem. Phys. Lett. 391 (2004) 293
11. Kohara T., Tamagaki H., Ikari Y., and Fujii H. Surf. Coat. Technol. 185 (2004) 166
12. Rotole J.A., and Sherwood P.M.A. Surf. Sci. Spectra 5 (1998) 18
13. Rotole J.A., and Sherwood P.M.A. J. Vac. Sci. Technol., A 17 (1999) 1091
14. S herwood P.M.A. Surf. Sci. Spectra 5 (1998) 1
15. Laidani N., Vanzetti L., Anderle M., Basillais A., and Boulmer-Leborgne C. J. Perriere Surf. Coat.Technol. 122 (1999) 242
16. Wagner C.D., Passoja D.E., and Hillery H.F. J. Vac. Sci. Technol. 21 (1982) 933
17. Takagi-Kawai M., Soma M., Onishi T., and Tamaru K. Can. J. Chem. 58 (1980) 2132
18. Prunty T.R., Smart J.A., Chumbes E.M., Ridley B.K., Eastman L.F., and Shealy J.R. 17th Biennial IEEE/Cornell University Conference on Advanced Concepts in High Performance Devices, NY, U.S.A., August 7-9, 2000, Proceedings of 2000 IEEE/Cornell Conference on High Performance Devices (2000) 208