Dopant ion concentration dependence of growth and faceting of manganese-doped GaN nanowires

Journal of the American Chemical Society

Volumn 129, Issue 36, 2007, Pages 10980-10981

  Radovanovic, Pavle V ^a   Stamplecoskie, Kevin G ^a   Pautler, Brent G ^a  

^a UNIVERSITY OF WATERLOO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

MANGANESE; NANOWIRE;

ARTICLE; BINDING AFFINITY; CRYSTAL STRUCTURE; CRYSTALLIZATION; ELECTRON DIFFRACTION; MATERIAL STATE; ROENTGEN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR; STRUCTURE ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 34548767176     PISSN: 00027863     EISSN: None     Source Type: Journal    
DOI: 10.1021/ja073310r     Document Type: Article

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