Growth and characterisation of InAs/InGaAs quantum dots like structure on GaAs/Si substrate by AP-MOCVD

Applied Surface Science

Volumn 191, Issue 1-4, 2002, Pages 196-204

  Thilakan, Periyasamy ^a   Kazi, Zaman Iqbal ^b   Egawa, Takashi ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

AP MOCVD; GaAs Si; Growth; InAs; InGaAs; Quantum dot; Scanning probe microscopy

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHARACTERIZATION; COMPOSITION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SUBSTRATES;

SCANNING PROBE MICROSCOPY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037123554     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)00183-6     Document Type: Article

References (21)