Localized strain reduction in strain-compensated InAs/GaAs stacked quantum dot structures

Applied Physics Letters

Volumn 90, Issue 16, 2007, Pages

  Nuntawong, N ^a   Tatebayashi, J ^a   Wong, P S ^a   Huffaker, D L ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SPACER THICKNESS; STRAIN REDUCTION; VERTICAL COUPLING PROBABILITY;

COMPUTER SIMULATION; OPTICAL PROPERTIES; PROBABILITY; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN MEASUREMENT;

SEMICONDUCTOR QUANTUM DOTS;

EID: 34247390547     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2730732     Document Type: Article

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