Mid-10 5 cm -2 threading dislocation density in optimized high-Ge content relaxed graded SiGe on Si for III-V solar on Si

Materials Research Society Symposium Proceedings

Volumn 836, Issue , 2005, Pages 235-240

  Isaacson, David M ^a   Dohrman, Carl L ^a   Pitera, Arthur J ^a   Gupta, Saurabh ^a   Fitzgerald, Eugenc A ^a  

^a Massachusetts Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER DEVICES; DISLOCATION DENSITY; DISLOCATION NUCLEATION;

CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); SILICON; SOLAR CELLS;

MATERIALS SCIENCE;

EID: 28844477096     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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