Nucleation of W during chemical vapor deposition from WF6 and SiH4

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 6 B, 2004, Pages 3945-3950

  Kajikawa, Yuya ^a   Tsumura, Takeshi ^a   Noda, Suguru ^a   Komiyama, Hiroshi ^a   Shimogaki, Yukihiro ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

Chemical vapor deposition; Modeling; Nucleation and growth; Silane; Tungsten; Tungsten hexafluoride

Indexed keywords

DEPOSITION RATE; FILM FORMATION; NUCLEATION KINETICS; SUBMICRON FEATURES;

CHEMICAL VAPOR DEPOSITION; MIXTURES; MONOLAYERS; NUCLEATION; OPTIMIZATION; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY;

TUNGSTEN;

EID: 4444316751     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.3945     Document Type: Conference Paper

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