Effect of silane flowing time on W volcano and plug formation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 5 A, 2002, Pages 2906-2907

  Chang, Hui Lin ^a,b   Juang, Fung Lung ^a,b   Kuo, Cheng Tzu ^a,b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b Silicon Integrated Systems group   (Taiwan)

Author keywords

Barrier film; Device; SiH4; W plug; W volcano

Indexed keywords

DECOMPOSITION; DEFECTS; DEPOSITION; NUCLEATION; SILANES;

PLUG FORMATION;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0036578221     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.2906     Document Type: Article

References (12)