Homogeneous tungsten chemical vapor deposition on silane pretreated titanium nitride

Electrochemical and Solid-State Letters

Volumn 2, Issue 8, 1999, Pages 398-400

  Herner, S B ^a   Desai, S A ^a   Mak, A ^a   Ghanayem, S G ^a  

^a APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; SILANES; SUBSTRATES; TITANIUM NITRIDE; TUNGSTEN;

HOMOGENEOUS NUCLEATION; TUNGSTEN NUCLEATION FILMS;

METALLIC FILMS;

EID: 0032688246     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1390850     Document Type: Article

References (12)

1. T. Kaga, M. Ohkura, F. Murai, N. Yokoyama, and E. Takeda. J. Vac. Sci. Technol., B, 13, 2329 (1995).
2. S. M. Rossnagel, J. Vac. Sci. Technol., B, 16, 2585 (1998).
3. E. J. McInerney, T. W. Mountsier, B. L. Chin, and E. K. Broadbent, J. Vac. Sci. Technol., B, 11, 734 (1993).
4. M. Danek, M. Liao, J. Tseng, K. Littau, D. Saigal, H. Zheng, R. Mosely, and M. Eizenberg, Appl. Phys. Lett., 68, 1015 (1996).
5. S. L. Lantz, A. E. Bell, W. K. Ford, and D. Danielson, J. Vac. Sci. Technol., A, 12, 1032 (1994).
6. M. L. Yu, K. Y. Ahn, and R. V. Joshi, J. Appl. Phys., 67, 1055 (1990).
7. S. -L. Zhang, R. Palmans, C. S. Petersson, and K. Maex, J. Appl. Phys., 78, 7313 (1995).
8. A. K. Nanda, S. M. Merchant, and P. K. Roy, Mater. Res. Soc. Symp. Proc., 382, 401 (1995).
9. N. Kobayashi, H. Goto, and M. Suzuki, J. Appl. Phys., 69, 1013 (1991)
10. G. Ramanath, J. R. A. Carlsson, J. E. Greene, L. H. Allen, V. C. Hornback, and D. J. Allman, Appl. Phys. Lett., 69, 3179 (1996).
11. S. Parikh, L. Akselrod, J. Gardner, K. Armstrong, and N. Parekh. Thin Solid Films, 320, 26 (1998).
12. M. Rutten, D. Greenwall, S. Luce, and R. Dreves. Mater. Res. Soc. Symp. Proc., 239, 277 (1992).