Characterization of Si distribution at the tungsten/titanium nitride interface using secondary ion mass spectrometry - an investigation of the dynamic response of a chemical vapor deposition chamber

Applied Surface Science

Volumn 165, Issue 2, 2000, Pages 154-158

  Jones, Clive M ^a   Zhao, Jin ^a   Yuan, Ting ^a  

^a ADVANCED MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; HYDROGEN; NUCLEATION; REDUCTION; SECONDARY ION MASS SPECTROMETRY; SILANES; SILICON; TITANIUM NITRIDE; TUNGSTEN; TUNGSTEN COMPOUNDS;

TUNGSTEN HEXAFLUORIDE;

INTERFACES (MATERIALS);

EID: 0034276395     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00368-8     Document Type: Article

References (10)

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