Impact of collector-base junction traps on low-frequency noise in high breakdown voltage SiGe HBTs

IEEE Transactions on Electron Devices

Volumn 51, Issue 9, 2004, Pages 1475-1482

  Tang, Jin ^a   Niu, Guofu ^a   Joseph, Alvin J ^b   Harame, David L ^b  

^a AUBURN UNIVERSITY   (United States)

^b IEEE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COLLECTOR BASE JUNCTION TRAPS; HIGH BREAKDOWN VOLTAGE DEVICES; HIGH INJECTION BARRIER EFFECT; INTERNAL EMITTER BASE VOLTAGE; JUNCTION RECOMBINATION CURRENT; LOW FREWUENCY NOISE; NEUTRAL BASE RECOMBINATION; SILICON GERMANIDE; STANDARD BREAKDOWN VOLTAGE;

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CURRENT COLLECTORS; ELECTRIC RESISTANCE; ELECTRON TRAPS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SPURIOUS SIGNAL NOISE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 4444239902     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.833582     Document Type: Article

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