Impact of collector-base junction traps and high injection barrier effect on 1/f noise

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2003, Pages 175-178

  Tang, Jin ^a   Niu, Guofu ^a   Joseph, Alvin J ^b   Harame, David L ^b  

^a AUBURN UNIVERSITY   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC SPACE CHARGE; ELECTRON TRAPS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SPURIOUS SIGNAL NOISE;

COLLECTOR BASE JUNCTION TRAPS; SILICON GERMANIUM; SPACE CHARGE REGION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 1042277547     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. G. Niu, Z. Jin, J. D. Cressler, R. Rapeta, A. J. Joseph, and D. L. Harame, "Transistor Noise in SiGe HBT RF Technology," IEEE Journal of Solid-State Circuits, vol. 36, no. 9, pp. 1424-1427, September 2001.
2. J. Tang, G. Niu, Z. Jin, J.D. Cressler, S. Zhang, A.J. Joseph, and D.L. Harame, "Modeling and Characterization of SiGe HBT Low-frequency Noise Figures-of-merit for RFIC Applications," IEEE Trans. Microwave Theory and Techniques, vol.50, no. 11, pp. 2467-2473, November 2002.
3. Z. A. Shafi, C. J. Gibbings, P. Ashburn, I. R. C. Post, C.G. Tuppen, and D. J. Godfrey, "The importance of neutral base recombination in compromising the gain of Si/SiGe heterojunction bipolar transistors," IEEE Trans. Electron Devices, vol. 38, pp. 1973-1976, August 1991.
4. J. M. McGregor, D. J. Roulston, J. P. Noel, and D. C. Houghton, "Output conductance of bipolar transistors with large neutral base recombination current," IEEE Trans. Electron Devices, vol. 39, pp. 2569-2575, November 1992.
5. G. Niu, J.D. Cressler, and A.J. Joseph, "Quantifying Neural Base Recombination and the Effects of Collector-base Junction Traps in UHV/CVD SiGe HBT's," IEEE Trans. Electron Devices, vol. 45, no. 12, pp. 2499-2503, December 1998.
6. G. Niu, S. Zhang, J.D. Cressler, A.J. Joseph, J.S. Fairbanks, L.E. Larson, C.S. Webster, W.E. Ansley, and D.L. Harame, "SiGe profile design tradeoffs for RF circuit applications," Tech. Dig. International Electron Devices Meeting, pp. 573-576, 1999.
7. D.C. Ahlgren, M. Gilbert, D. Greenberg, J. Jeng, J. Malinowski, D. Nguyen-Ngoc, K. Schonenberg, K. Stein, R. Groves, K. Walter, G. Hueckel, D. Colavito, G. Freeman, D. Sunderland, D.L. Harame, and B. Meyerson, "Manufacturability demonstration of an integrated SiGe HBT technology for the analog and wireless marketplace," Tech. Dig. International Electron Devices Meeting, pp. 859-862, 1996.