Low resistivity of Pt silicide nanowires measured using double-scanning-probe tunneling microscope

Applied Physics Letters

Volumn 92, Issue 20, 2008, Pages

  Lim, Do Kyung ^a,b   Kubo, Osamu ^b,d   Shingaya, Yoshitaka ^b,d   Nakayama, Tomonobu ^b,d,e   Kim, Young Heon ^a,f   Lee, Jeong Yong ^a   Aono, Masakazu ^b,d   Lee, Hangil ^c   Lee, Dohyun ^a,f   Kim, Sehun ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c Pohang University of Science and Technology (POSTECH)   (South Korea)

^d JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^e UNIVERSITY OF TSUKUBA   (Japan)

^f Korea Research Institute of Standards and Science   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; LEAKAGE CURRENTS; PLATINUM COMPOUNDS; SCANNING TUNNELING MICROSCOPY; SILICIDES; THICK FILMS;

CONDUCTION PATHS; PLATINUM SILICIDE NANOWIRES (PT2 SI NWS); SCHOTTKY BARRIERS;

NANOWIRES;

EID: 44349173661     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2935329     Document Type: Article

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