Vacancy ordering in self-assembled erbium silicide nanowires on atomically clean Si(0 0 1)

Applied Surface Science

Volumn 244, Issue 1-4, 2005, Pages 115-119

  Tsai, W C ^a   Hsu, H C ^a   Hsu, H F ^a   Chen, L J ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Defects; Epitaxy; Nanowires; Rare earth; Self assembled; Silicide

Indexed keywords

ANISOTROPY; ATOMIC FORCE MICROSCOPY; CRYSTAL DEFECTS; DEPOSITION; ERBIUM COMPOUNDS; NANOSTRUCTURED MATERIALS; SCANNING ELECTRON MICROSCOPY; SELF ASSEMBLY; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

LATTICE MATCHING; NANOWIRES; SELF-ASSEMBLED ERBIUM SILICIDE; VACANCY ORDERING;

EPITAXIAL GROWTH;

EID: 15844364245     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.10.072     Document Type: Conference Paper

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