A low damage Si3N4 sidewall spacer process for self-aligned sub-100 nm III-V MOSFETs

Microelectronic Engineering

Volumn 85, Issue 5-6, 2008, Pages 996-999

  Li, X ^a   Hill, R J W ^a   Zhou, H ^a   Wilkinson, C D W ^a   Thayne, I G ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

Damage; Etch; GaxGdyOz; GaAs; III V MOSFETs; RIE; Si3N4; Sidewall spacer

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DRAIN CURRENT; INDUCTIVELY COUPLED PLASMA; REACTIVE ION ETCHING; SEMICONDUCTING SILICON; SILICON NITRIDE;

DRAIN RESISTANCE; ELECTROSTATIC INTEGRITY; SELF-ALIGNMENT;

MOSFET DEVICES;

EID: 44149114531     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.12.064     Document Type: Article

References (12)

1. Wolf S., and Tauber R.N. Silicon Processing for the VLSI Era, vol. 1 - Process Technology. second ed. (2000), Latice press, Sunset Beach
2. Campbell S.A. The Science Engineering of Microelectronic Fabrication. second ed. (2001), Oxford University Press, New York
3. Cao X., Macintyre D.S., Thoms S., Li X., Zhou H., Wilkinson C.D.W., Holland M., McEwan F., McLellend H., and Thayne I. Journal of Vacuum Science and Technology B 23 6 (2005) 3138
4. Li X., Cao X., Zhou H., Wilkinson C.D.W., Thoms S., Macintyre D., Holland M., and Thayne I.G. Microelectronic Engineering 83 4-9 (2006) 1159
5. Passlack M., et al. IEEE Electron Device Letters 26 (2005) 713
6. Yang C.W., Fang Y.K., Chen C.H., et al. IEEE Electron Device Letters 24 1 (2005) 43
7. M. Goss, R. Thornburg, in: Proceedings of IEEE/SEMI Advanced Semiconductor Manufacturing Conference, Cambridge, USA, 10-12 September, 1997, p. 228.
8. Ye J.H., and Zhou M.S. Journal of the Electrochemical Society 147 3 (2000) 1168
9. Beinvogl W., Deppe H.R., Stokan R., and Hasler B. IEEE Transactions on Electron Devices 28 11 (1981) 1332
10. Li X., Zhou H., Wilkinson C.D.W., and Thayne I.G. Japanese Journal of Applied Physics 45 10B (2006) 8364
11. Kastenmeier B.E.E., Matsuo P.J., Beulens J.J., and Oehrlein G.S. Journal of Vacuum Science and Technology A 14 5 (1996) 2802
12. Reyes-Betanzo C., Moshkalyov S.A., Ramos A.C., Diniz J.A., and Swart J.W. Journal of the Electrochemical Society 149 3 (2002) G179