Low damage sputter deposition of tungsten for decanano compound semiconductor transistors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 6, 2005, Pages 3138-3142

  Cao, X ^a   MacIntyre, D S ^a   Thoms, S ^a   Li, X ^a   Zhou, H ^a   Wilkinson, C D W ^a   Holland, M ^a   Donaldson, L ^a   McEwan, F ^a   McLellend, H ^a   Thayne, I ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COATINGS; HIGH ELECTRON MOBILITY TRANSISTORS; MAGNETRON SPUTTERING; SPUTTER DEPOSITION; TRANSPORT PROPERTIES;

DEVICE FABRICATION; SPUTTERING CURRENTS; SUBSTRATE DAMAGE; TUNGSTEN FILMS;

TUNGSTEN;

EID: 29144465048     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2127937     Document Type: Article

References (12)

1. F. D. Auret, M. Nei, and N. A. Bojarczuk, J. Vac. Sci. Technol. B 4, 1168 (1986).
2. D. A. Vandenbrouke, R. L. Van Meirhaeghe, W. H. Laflere, and F. Cardon, Semicond. Sci. Technol. 2, 293 (1987).
3. F. D. Auret, S. A. Goodman, G. Myburg, and W. O. Barnard, Vacuum 46, 1087 (1995).
4. H. Arakaki, K. Ohashi, and T. Sudou, Semicond. Sci. Technol. 19, 127 (2004).
5. N. A. Bojarczuk, J. Vac. Sci. Technol. 18, 890 (1981).
6. L. J. van der Pauw, Philips Tech. Rev. 20, 220 (1958).
7. O. Bierwagen, R. Pomraenke, S. Eilers, and W. T. Masselinnk, Phys. Rev. B 70, 165307 (2004).
8. B. Chapman, Glow Discharge Processes (Wiley-Interscience, New York, 1980).
9. C. H. Shon, J. K. Lee, H. J. Lee, Y. Yang, and T. H. Chung, IEEE Trans. Plasma Sci. 26, 1635 (1998).
10. K. Bouziane, M. Mamor, and F. Meyer, Appl. Phys. A: Mater. Sci. Process. 81, 209 (2005).
11. R. J. Shul, M. L. Lovejoy, A. G. Baca, Z. J. C., D. J. Rieger, M. J. Hafich, R. F. Corless, and C. B. Vartuli, J. Vac. Sci. Technol. A 13, 912 (1995).
12. T. S. Shamirzaev, K. S. Zhuravlev, A. I. Toropov, and A. K. Bakarov, Physica B 340-342, 1099 (2003).