Improvement of short-channel characteristics of a 0.1-μm PMOSFET with ultralow-temperature nitride spacer by using a novel oxide capped boron uphill treatment

IEEE Electron Device Letters

Volumn 24, Issue 1, 2003, Pages 43-45

  Yang, C W ^a   Fang, Y K ^a   Chen, C H ^a   Wang, W D ^a   Ting, S F ^a   Chen, S F ^a   Cheng, J Y ^b   Wang, M F ^b   Chen, C L ^b   Yao, L G ^b   Lee, T L ^b   Chen, S C ^b   Yu, C H ^b   Liang, M S ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

Boron; Nitride spacer; Shallow junction; Short channel effect; Uphill

Indexed keywords

ANNEALING; BORON; HETEROJUNCTIONS; HIGH TEMPERATURE OPERATIONS; ION IMPLANTATION; NITRIDES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYSILICON; SILICA;

OXIDE CAPPED BORON UPHILL TREATMENT; SHALLOW JUNCTION; SHORT CHANNEL EFFECT; SOURCE-DRAIN EXTENSION IMPLANTATION; ULTRALOW-TEMPERATURE NITRIDE SPACER;

MOSFET DEVICES;

EID: 0037253050     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.807312     Document Type: Letter

References (9)

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