A low damage RIE process for the fabrication of compound semiconductor based transistors with sub-100 nm tungsten gates

Microelectronic Engineering

Volumn 83, Issue 4-9 SPEC. ISS., 2006, Pages 1159-1162

  Li, X ^a   Cao, X ^a   Zhou, H ^a   Wilkinson, C D W ^a   Thoms, S ^a   Macintyre, D ^a   Holland, M ^a   Thayne, I G ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

Activation energy; Compound semiconductor; Damage; Dry etching; HEMT; RIE; Tungsten

Indexed keywords

ACTIVATION ENERGY; DRY ETCHING; HIGH ELECTRON MOBILITY TRANSISTORS; REACTIVE ION ETCHING; TUNGSTEN;

COMPOUND SEMICONDUCTOR; DAMAGE; PLASMA-INDUCED DAMAGE;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 33646027892     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.01.074     Document Type: Article

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