Self-assembly of well-aligned 3C-SiC ripples by focused ion beam

Applied Physics Letters

Volumn 92, Issue 19, 2008, Pages

  Zhang, Jiaming ^a   Wei, Qiangmin ^a   Lian, Jie ^a,b   Jiang, Weilin ^c   Weber, William J ^c   Ewing, Rodney C ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^c PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; FOCUSED ION BEAMS; ION BOMBARDMENT; OPTOELECTRONIC DEVICES; SCANNING ELECTRON MICROSCOPY; SELF ASSEMBLY; SILICON CARBIDE;

BEAM CURRENT; ION BEAM FLUX;

SINGLE CRYSTAL SURFACES;

EID: 44049107652     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2927473     Document Type: Article

References (30)

1. N. G. Wright, A. B. Horsfall, and K. Vassilevski, Mater. Today MTOUAN 1369-7021 11, 16 (2007).
2. G. L. Harris, Properties of Silicon Carbide (INSPEC, London, UK, 1995).
3. M. Anderson, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1615317 83, 2964 (2003).
4. J.-J. Greffet, C. Remi, J. Karl, J.-P. Mulet, S. Painguy, and Y. Chen, Nature (London) NATUAS 0028-0836 10.1038/416061a 416, 61 (2002).
5. N. Ocelic and R. Hillenbrand, Nat. Mater. NMAACR 1476-1122 10.1038/nmat1194 3, 606 (2004).
6. M. Mehregany and C. A. Zorman, Thin Solid Films THSFAP 0040-6090 355-356, 518 (1999).
7. S. Ichim and M. J. Aziz, J. Vac. Sci. Technol. B JVTBD9 1071-1023 10.1116/1.1897711 23, 1068 (2005).
8. A. Karmous, A. Cuenat, A. Ronda, I. Berbezier, S. Atha, and R. Hull, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1828597 85, 6401 (1998).
9. A. Datta, Y.-R. Wu, and Y. L. Wang, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.63.125407 63, 125407 (2001).
10. B. Ziberi, F. Frost, Th. Hoche, and B. Rauschenbach, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.72.235310 72, 235310 (2005).
11. R. M. Bradley and J. M. E. Harper, J. Vac. Sci. Technol. A JVTAD6 0734-2101 10.1116/1.575561 6, 2390 (1988).
12. R. Cuerno and A.-L. Barabasi, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.74.4746 74, 4746 (1995).
13. J. Erlebacher, M. J. Aziz, E. Chason, and M. B. Sinclair, J. Vac. Sci. Technol. A JVTAD6 0734-2101 10.1116/1.582127 18, 115 (2000).
14. S. Habenicht, K. P. Lieb, J. Koch, and A. D. Wieck, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.65.115327 65, 115327 (2002).
15. J. Muoz-García, M. Castro, and R. Cuerno, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.96.086101 96, 086101 (2006).
16. M. Castro, R. Cuern, L. Vázquez, and R. Gago, Phys. Rev. Lett. PRLTAO 0031-9007 94, 016012 (2005).
17. S. Rusponi, C. Boragno, and U. Valbusa, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.78.2795 78, 2795 (1997).
18. S. Rusponi, G. Costantini, C. Borgano, and U. Valbusa, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.81.4184 81, 4184 (1998).
19. H. X. Qian, W. Zhou, Y. Q. Fu, B. K. A. Ngoi, and G. C. Lim, Appl. Surf. Sci. ASUSEE 0169-4332 240, 140 (2005).
20. Y. Fu and N. K. A. Bryan, Opt. Express OPEXFF 1094-4087 10.1364/OPEX.12.003707 12, 3707 (2004).
21. E. Chason, T. M. Mayerand, B. K. Kellerman, D. T. Mcllroy, and A. J. Howard, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.72.3040 72, 3040 (1994).
22. J. Erlebacher, M. J. Aziz, E. Chason, M. B. Sinclair, and J. A. Floro, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.82.2330 82, 2330 (1999).
23. W. Zhou, A. Cuenat, and M. J. Aziz, Proceedings of the 13th Conference on Microscopy of Semiconducting Materials 2003 (unpublished), Vol. 180, p. 625.
24. T. M. Mayer, E. Chason, and A. J. Howard, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.357748 76, 1633 (1994).
25. J. Lian, W. Zhou, L. M. Wang, L. A. Boatner, and R. C. Ewing, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2181203 88, 093112 (2006).
26. Y. S. Katharria, S. Kumar, P. S. Lakshmy, D. Kanjilal, and A. T. Sharma, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2769804 102, 044301 (2007).
27. W. Jiang, S. Thevuthasan, W. J. Weber, and F. Namavar, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.124143 74, 3501 (1999).
28. G. Carter and V. Vishnyakov, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.54.17647 54, 17647 (1996).
29. G. Carter, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.369408 85, 455 (1999).
30. R. Hillenbrand, Ultramicroscopy ULTRD6 0304-3991 10.1016/j.ultramic.2003. 11.017 100, 421 (2004).