In(Ga)As self-assembled quantum ring formation by molecular beam epitaxy

Applied Physics Letters

Volumn 82, Issue 15, 2003, Pages 2401-2403

  Granados, Daniel ^a   García, Jorge M ^a  

^a INSTITUTO DE MICROELECTRÓNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DIFFUSION; ELECTRON TRANSITIONS; FILM GROWTH; MOLECULAR BEAM EPITAXY; MONOLAYERS; MORPHOLOGY; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; POLARIZATION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SELF ASSEMBLY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SPECTROSCOPIC ANALYSIS;

QUANTUM RINGS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0038665312     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1566799     Document Type: Article

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