Reduction of thermal oxide desorption etching on gallium arsenide

Thin Solid Films

Volumn 515, Issue 10, 2007, Pages 4419-4422

  Pun, A F ^a   Wang, X ^a   Durbin, S M ^b   Zheng, J P ^a  

^a FAMU FSU COLLEGE OF ENGINEERING   (United States)

^b UNIVERSITY OF CANTERBURY   (New Zealand)

Author keywords

GaAs; Sacrificial layer; Surface roughness; Thermal desorption

Indexed keywords

ETCHING; HIGH ENERGY ELECTRON DIFFRACTION; REDUCTION; SURFACE ROUGHNESS; TEMPERATURE PROGRAMMED DESORPTION;

FILM DEPOSITION; INHERENT PIT FORMATIONS; SACRIFICIAL LAYERS; THERMAL OXIDE DESORPTION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 33847059269     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.07.156     Document Type: Article

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