Reversible creation and annihilation of a local leakage path in HfO 2/GeOx stacked gate dielectrics: A direct observation by ultrahigh vacuum conducting atomic force microscopy

Applied Physics Letters

Volumn 89, Issue 22, 2006, Pages

  Yamamura, K ^a   Kita, K ^a   Toriumi, A ^a   Kyuno, K ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; ELECTRIC CONDUCTIVITY; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; OXIDATION; ULTRAHIGH VACUUM;

ELECTRICAL STRESSES; REVERSE BIAS; STACKED GATE DIELECTRICS;

DIELECTRIC MATERIALS;

EID: 33751562278     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2396896     Document Type: Article

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