Effect of improved wettability of silicon-based materials with electrolyte for void free copper deposition in high aspect ratio through-vias

Thin Solid Films

Volumn 516, Issue 16, 2008, Pages 5194-5200

  Dixit, Pradeep ^a   Chen, Xiaofeng ^a   Miao, Jianmin ^a   Preisser, Robert ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b ATOTECH DEUTSCHLAND GMBH   (Germany)

Author keywords

Deep reactive ion etching; Surface treatment; Through wafer electroplating; Wettability

Indexed keywords

ASPECT RATIO; ELECTROPLATING; FUNCTIONAL GROUPS; REACTIVE ION ETCHING; SURFACE TREATMENT; WETTING;

COPPER ELECTROLYTES; DEEP REACTIVE ION ETCHING; POLAR FUNCTIONAL GROUPS; THROUGH WAFER ELECTROPLATING;

SILICON NITRIDE;

EID: 43949085033     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.07.058     Document Type: Article

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