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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 6 A, 2004, Pages 3269-3274

Optoelectronic and structural properties of undoped microcrystalline silicon thin films: Dependence on substrate temperature in very high frequency plasma enhanced chemical vapor deposition technique

(3) Das, Chandan a Jana, Tapati a Ray, Swati a

a DEPARTMENT OF MATERIALS SCIENCE (India)

Author keywords

AFM; FTIR; Microcrystalline silicon; Raman spectra; Thin film; VHF PECVD; XRD

Indexed keywords

ABSORPTION; ATOMIC FORCE MICROSCOPY; CRYSTALLINE MATERIALS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GRAIN SIZE AND SHAPE; HYDROGEN; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SCATTERING; SILANES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

ATOMIC FORCE MICROSCOPY (AFM); FOURIER TRANSFORM INFRARED SPECTROSCOPY (FTIR); MICROCRYSTALLINE SILICON; VHF-PECVD; XRD;

AMORPHOUS SILICON;

EID: 4344683985 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.43.3269 Document Type: Article

Times cited : (5)

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