Effects of deposition temperature on polycrystalline silicon films using plasma-enhanced chemical vapor deposition

Journal of Applied Physics

Volumn 84, Issue 1, 1998, Pages 584-588

  Hasegawa, S ^a   Sakata, M ^a   Inokuma, T ^a   Kurata, Y ^a  

^a KANAZAWA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000568036     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368085     Document Type: Article

References (15)

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