Structural and optical properties of polycrystalline silicon thin films deposited by the plasma enhanced chemical vapour deposition method

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 6 SUPPL. A, 1996, Pages 3321-3326

  Zhu, Furong ^a   Kohara, Hajime ^a   Fuyuki, Takashi ^a   Matsunami, Hiroyuki ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Polycrystalline silicon; Solar cells; Thin film

Indexed keywords

CALCULATIONS; CHEMICAL VAPOR DEPOSITION; FILM GROWTH; MORPHOLOGY; POLYCRYSTALLINE MATERIALS; RAMAN SCATTERING; SEMICONDUCTOR PLASMAS; SILICON WAFERS; SOLAR CELLS; SPECTROPHOTOMETERS; X RAY DIFFRACTION;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION; OPTICAL ADMITTANCE METHOD; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE SILICON; RAMAN SCATTERING SPECTROSCOPY MEASUREMENT; SOLID PHASE RECRYSTALLIZATION;

THIN FILMS;

EID: 0030170158     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.3321     Document Type: Article

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