Accelerated testing of SiC>2 reliability

IEEE Transactions on Electron Devices

Volumn 43, Issue 1, 1996, Pages 70-80

  Rosenbaum, Elyse ^a,b   King, Joseph C ^a,b   Hu, Chenming ^a,b  

^a University of Illinois at Urbana Champaign   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; LIGHT SOURCES; MATHEMATICAL MODELS; MOS DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE TESTING; SILICA; SUBSTRATES;

CHARGE TO BREAKDOWN TEST; GATE VOLTAGE; RAMP CURRENT CHARGE TO BREAKDOWN TEST; RAMP VOLTAGE BREAKDOWN TEST; TIME DEPENDENT DIELECTRIC BREAKDOWN;

INTEGRATED CIRCUIT TESTING;

EID: 0029776510     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.477595     Document Type: Article

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