Polarity-dependent tunneling current and oxide breakdown in dual-gate CMOSFET's

IEEE Electron Device Letters

Volumn 19, Issue 10, 1998, Pages 391-393

  Shi, Ying ^a,c   Ma, T P ^a,c   Prasad, Sharad ^b,c   Dhanda, Sumit ^b,c  

^a Yale University   (United States)

^b AGERE SYSTEMS   (United States)

^c IEEE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CURRENT MEASUREMENT; ELECTRON TUNNELING; LEAKAGE CURRENTS; OXIDES;

POLARITY MEASUREMENT;

MOSFET DEVICES;

EID: 0032188567     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.720196     Document Type: Article

References (7)

1. K. F Schuegraf, C. C. King, and C. Hu, "Ultra-thin silicon dioxide leakage current and scaling limit," in Dig. 1992 Symp. VLSI, June 1992, pp. 18-19.
2. S.-H. Lo, D. A. Buchanan, Y. Taur, and W. Wang, "Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide in nMOSFET's," IEEE Electron Device Lett., vol 18, pp. 209-211, May 1997.
3. 2 breakdown model for very low voltage lifetime extrapolation," IEEE Trans. Electron Devices, vol 41, pp. 761-767, May 1994.
4. Y. Hokari et al., "Stress voltage polarity dependence of thermally grown thin gate oxide wearout," IEEE Trans Electron Device, vol. 35, pp. 1299-1304, Aug. 1988.
5. 2 degradation with charge injection polarity," IEEE Electron Device Lett., vol. 14, pp. 512-514, Nov. 1993.
6. 2," in IEDM Tech. Dig., Dec. 1994, pp. 617-620.
7. E. Hasegawa et al., "The impact of nitrogen profile engineering on ultra-thin nitrided oxide films for dual-gate CMOS ULSI," in IEDM Tech. Dig., Dec. 1995, pp. 327-330.